shengyuic
shengyuic
sale@shengyuic.com
SI4336DY-T1-E3
the part number is SI4336DY-T1-E3
Part
SI4336DY-T1-E3
Manufacturer
Description
MOSFET N-CH 30V 17A 8-SOIC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 30V
Power Dissipation (Max): 1.6W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 30V 17A (Ta) 1.6W (Ta) Surface Mount 8-SO
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: N-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Other Names: SI4336DY-T1-E3TR
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 25A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Related Parts For SI4336DY-T1-E3
SI4300-E-BM

Silicon Labs

IC RF AMP 900MHZ/1.8GHZ 20LGA

SI4304DY-T1-E3

VISHAY

Si4304DY - N-Channel 30-V (D-S) MOSFET

SI4310BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 7.5A 14SOIC

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!