shengyuic
shengyuic
sale@shengyuic.com
SI4425DDY-T1-GE3
the part number is SI4425DDY-T1-GE3
Part
SI4425DDY-T1-GE3
Manufacturer
Description
TRFETPCHANNELSI4425D
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.7308 $0.7162 $0.6943 $0.6723 $0.6431 Get Quotation!
Specification
Min Operating Temperature -55 °C
Threshold Voltage -1.2 V
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
Fall Time 9 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) -30 V
Drain to Source Resistance 8.1 mΩ
Number of Channels 1
Number of Pins 8
Height 1.5 mm
Number of Elements 1
Input Capacitance 2.61 nF
Width 4 mm
Lead Free Lead Free
Rds On Max 9.8 mΩ
Max Power Dissipation 5.7 W
Max Junction Temperature (Tj) 150 °C
Drain to Source Breakdown Voltage -30 V
Nominal Vgs -1.2 V
Gate to Source Voltage (Vgs) 20 V
REACH SVHC Unknown
Turn-On Delay Time 12 ns
Weight 186.993455 mg
Resistance 9.8 MΩ
Max Operating Temperature 150 °C
Power Dissipation 2.5 W
Continuous Drain Current (ID) -13 A
Rise Time 9 ns
Length 5 mm
Turn-Off Delay Time 42 ns
Contact Plating Tin
Case/Package SOIC
Related Parts For SI4425DDY-T1-GE3
SI4401BDY-T1-E3

Vishay

MOSFET P-CH 40V 8.7A 8-SOIC

SI4401BDY-T1-E3

Vishay Siliconix

MOSFET P-CH 40V 8.7A 8SO

SI4401BDY-T1-GE3

Vishay

MOSFET P-CH 40V 8.7A 8-SOIC

SI4401BDY-T1-GE3

Vishay Siliconix

MOSFET P-CH 40V 8.7A 8SO

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!