1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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RdsOn(Max)@Id | 18mOhm @ 8.8A, 10V |
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Vgs(th)(Max)@Id | 20nC @ 5V |
Vgs | 1.8V @ 250µA |
Configuration | N and P-Channel, Common Drain |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 30V, 8V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | 8-SOIC |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 8-SOIC (0.154, 3.90mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 1.3W |
Series | TrenchFET® |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 6.3A, 4.1A |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
Power-Max | -55°C ~ 150°C (TJ) |
VISHAY
Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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