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SI4501BDY-T1-GE3
the part number is SI4501BDY-T1-GE3
Part
SI4501BDY-T1-GE3
Manufacturer
Description
MOSFET N/P-CH 30V/8V 12A 8SOIC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 17mOhm @ 10A, 10V
Vgs(th)(Max)@Id 25nC @ 10V
Vgs 2V @ 250µA
Configuration N and P-Channel, Common Drain
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V, 8V
OperatingTemperature -
ProductStatus Obsolete
Package/Case Surface Mount
GateCharge(Qg)(Max)@Vgs 805pF @ 15V
Grade 8-SOIC
MountingType -
InputCapacitance(Ciss)(Max)@Vds 4.5W, 3.1W
Series TrenchFET®
Qualification
SupplierDevicePackage 8-SOIC (0.154, 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 12A, 8A
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Power-Max -55°C ~ 150°C (TJ)
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