1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Min Operating Temperature | -55 °C |
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Drain to Source Breakdown Voltage | 30 V |
Gate to Source Voltage (Vgs) | 20 V |
Mount | Surface Mount |
Fall Time | 25 ns |
Turn-On Delay Time | 10 ns |
RoHS | Compliant |
Weight | 186.993455 mg |
Radiation Hardening | No |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation | 2 W |
Drain to Source Resistance | 25 mΩ |
Continuous Drain Current (ID) | 6.9 A |
Rise Time | 10 ns |
Number of Channels | 2 |
Length | 5 mm |
Turn-Off Delay Time | 55 ns |
Number of Pins | 8 |
Height | 1.55 mm |
Width | 4 mm |
Case/Package | SO |
Max Power Dissipation | 2 W |
VISHAY
Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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