sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 60 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Mount | Surface Mount |
| Fall Time | 35 ns |
| Turn-On Delay Time | 8 ns |
| RoHS | Non-Compliant |
| Weight | 186.993455 mg |
| Max Operating Temperature | 175 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation | 2.4 W |
| Drain to Source Resistance | 55 mΩ |
| Continuous Drain Current (ID) | 4.5 A |
| Rise Time | 10 ns |
| Number of Channels | 2 |
| Turn-Off Delay Time | 12 ns |
| Number of Pins | 8 |
| Number of Elements | 2 |
| Case/Package | SOIC |
| Max Power Dissipation | 2.4 W |
VISHAY
Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!