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SI4778DY-T1-GE3
the part number is SI4778DY-T1-GE3
Part
SI4778DY-T1-GE3
Manufacturer
Description
MOSFET N-CH 25V 8A 8SO
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Part
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Pricing
Specification
RdsOn(Max)@Id 2.2V @ 250µA
Vgs(th)(Max)@Id ±16V
Vgs 18 nC @ 10 V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 25 V
OperatingTemperature 8-SOIC
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 8-SOIC (0.154, 3.90mm Width)
InputCapacitance(Ciss)(Max)@Vds 2.4W (Ta), 5W (Tc)
Series TrenchFET®
Qualification
SupplierDevicePackage 680 pF @ 13 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 8A (Tc)
Vgs(Max) -
MinRdsOn) 23mOhm @ 7A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) Surface Mount
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