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SI4816BDY-T1-E3
the part number is SI4816BDY-T1-E3
Part
SI4816BDY-T1-E3
Manufacturer
Description
MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.4536 $1.4245 $1.3809 $1.3373 $1.2792 Get Quotation!
Specification
RdsOn(Max)@Id 18.5mOhm @ 6.8A, 10V
Vgs(th)(Max)@Id 10nC @ 5V
Vgs 3V @ 250µA
Configuration 2 N-Channel (Half Bridge)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
OperatingTemperature Surface Mount
ProductStatus Active
Package/Case 8-SOIC
GateCharge(Qg)(Max)@Vgs -
Grade -
MountingType 8-SOIC (0.154, 3.90mm Width)
InputCapacitance(Ciss)(Max)@Vds 1W, 1.25W
Series LITTLE FOOT®
Qualification
SupplierDevicePackage -
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 5.8A, 8.2A
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Power-Max -55°C ~ 150°C (TJ)
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