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SI4920DY-T1-E3
the part number is SI4920DY-T1-E3
Part
SI4920DY-T1-E3
Manufacturer
Description
MOSFET 2N-CH 30V 8SOIC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
Specification
RdsOn(Max)@Id 25mOhm @ 6.9A, 10V
Vgs(th)(Max)@Id 23nC @ 5V
Vgs 1V @ 250µA (Min)
Configuration 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
OperatingTemperature Surface Mount
ProductStatus Obsolete
Package/Case 8-SOIC
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 8-SOIC (0.154, 3.90mm Width)
InputCapacitance(Ciss)(Max)@Vds 2W
Series TrenchFET®
Qualification
SupplierDevicePackage
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C -
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Power-Max -55°C ~ 150°C (TJ)
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