shengyuic
shengyuic
sale@shengyuic.com
SI5403DC-T1-GE3
the part number is SI5403DC-T1-GE3
Part
SI5403DC-T1-GE3
Manufacturer
Description
MOSFET P-CH 30V 6A 1206-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.81 $0.7938 $0.7695 $0.7452 $0.7128 Get Quotation!
Specification
RdsOn(Max)@Id 3V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 42 nC @ 10 V
FETFeature 2.5W (Ta), 6.3W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 1206-8 ChipFET™
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage 8-SMD, Flat Lead
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 6A (Tc)
Vgs(Max) 1340 pF @ 15 V
MinRdsOn) 30mOhm @ 7.2A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For SI5403DC-T1-GE3
SI5401A-A15682-GM

Skyworks Solutions Inc.

Linear IC's

SI5401A-A15682-GMR

Skyworks Solutions Inc.

Linear IC's

SI5401DC-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 5.2A 1206-8

SI5401DC-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 5.2A 1206-8

SI5402BDC-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 4.9A 1206-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!