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SI5511DC-T1-GE3
the part number is SI5511DC-T1-GE3
Part
SI5511DC-T1-GE3
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Description
MOSFET N/P-CH 30V 4A 1206-8
Lead Free/ROHS
pb RoHs
Datasheets
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Specification
Drain to Source Voltage (Vdss): 30V
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 2V @ 250µA
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: Mosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™
FET Feature: Logic Level Gate
Power - Max: 3.1W, 2.6W
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: N and P-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Base Part Number: SI5511
Other Names: SI5511DC-T1-GE3TR
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Operating Temperature: -55°C ~ 150°C (TJ)
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