shengyuic
shengyuic
sale@shengyuic.com
SI7119DN-T1-GE3
the part number is SI7119DN-T1-GE3
Part
SI7119DN-T1-GE3
Manufacturer
Description
MOSFET P-CH 200V 3.8A PPAK1212-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.1446 $1.1217 $1.0874 $1.053 $1.0072 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 25 nC @ 10 V
FETFeature 3.7W (Ta), 52W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® 1212-8
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage PowerPAK® 1212-8
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 3.8A (Tc)
Vgs(Max) 666 pF @ 50 V
MinRdsOn) 1.05Ohm @ 1A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -50°C ~ 150°C (TJ)
Related Parts For SI7119DN-T1-GE3
SI7100DN-T1-E3

Vishay Siliconix

MOSFET N-CH 8V 35A PPAK1212-8

SI7100DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 35A PPAK 1212-8

SI7101DN-T1-GE3

Vishay

MOSFET P-CH 30V 35A PPAK 1212-8

SI7101DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 35A PPAK 1212-8

SI7102DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

SI7102DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK1212-8

SI7104DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!