shengyuic
shengyuic
sale@shengyuic.com
SI7135DP-T1-GE3
the part number is SI7135DP-T1-GE3
Part
SI7135DP-T1-GE3
Manufacturer
Description
MOSFET P-CH 30V 60A PPAK SO-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.279 $2.2334 $2.165 $2.0967 $2.0055 Get Quotation!
Specification
RdsOn(Max)@Id 3V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 250 nC @ 10 V
FETFeature 6.25W (Ta), 104W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® SO-8
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage PowerPAK® SO-8
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 60A (Tc)
Vgs(Max) 8650 pF @ 15 V
MinRdsOn) 3.9mOhm @ 20A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For SI7135DP-T1-GE3
SI7100DN-T1-E3

Vishay Siliconix

MOSFET N-CH 8V 35A PPAK1212-8

SI7100DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 35A PPAK 1212-8

SI7101DN-T1-GE3

Vishay

MOSFET P-CH 30V 35A PPAK 1212-8

SI7101DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 35A PPAK 1212-8

SI7102DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

SI7102DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK1212-8

SI7104DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!