shengyuic
shengyuic
sale@shengyuic.com
SI7160DP-T1-E3
the part number is SI7160DP-T1-E3
Part
SI7160DP-T1-E3
Manufacturer
Description
MOSFET N-CH 30V 20A PPAK SO-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 30V
Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 30V 20A (Tc) 5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® SO-8
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: N-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 15V
Vgs (Max): ±16V
Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 15A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Related Parts For SI7160DP-T1-E3
SI7100DN-T1-E3

Vishay Siliconix

MOSFET N-CH 8V 35A PPAK1212-8

SI7100DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 35A PPAK 1212-8

SI7101DN-T1-GE3

Vishay

MOSFET P-CH 30V 35A PPAK 1212-8

SI7101DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 35A PPAK 1212-8

SI7102DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

SI7102DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK1212-8

SI7104DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!