shengyuic
shengyuic
sale@shengyuic.com
SI7460DP-T1-E3
the part number is SI7460DP-T1-E3
Part
SI7460DP-T1-E3
Manufacturer
Description
MOSFET N-CH 60V 11A PPAK SO-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.8232 $1.7867 $1.732 $1.6773 $1.6044 Get Quotation!
Specification
RdsOn(Max)@Id 3V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 100 nC @ 10 V
FETFeature 1.9W (Ta)
DraintoSourceVoltage(Vdss) 60 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® SO-8
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage PowerPAK® SO-8
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 11A (Ta)
Vgs(Max) -
MinRdsOn) 9.6mOhm @ 18A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For SI7460DP-T1-E3
SI7402DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 13A PPAK 1212-8

SI7402DN-T1-GE3

Vishay

MOSFET N-CH 12V 13A PPAK 1212-8

SI7403BDN-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 8A PPAK1212-8

SI7403BDN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 8A PPAK1212-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!