shengyuic
shengyuic
sale@shengyuic.com
SI7852DP-T1-E3
the part number is SI7852DP-T1-E3
Part
SI7852DP-T1-E3
Manufacturer
Description
MOSFET N-CH 80V 7.6A PPAK SO-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.7474 $2.6925 $2.61 $2.5276 $2.4177 Get Quotation!
Specification
RdsOn(Max)@Id 2V @ 250µA (Min)
Vgs(th)(Max)@Id ±20V
Vgs 41 nC @ 10 V
FETFeature 1.9W (Ta)
DraintoSourceVoltage(Vdss) 80 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® SO-8
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage PowerPAK® SO-8
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 7.6A (Ta)
Vgs(Max) -
MinRdsOn) 16.5mOhm @ 10A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For SI7852DP-T1-E3
SI7802DN-T1-E3

Vishay Siliconix

MOSFET N-CH 250V 1.24A PPAK

SI7802DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 250V 1.24A PPAK

SI7804DN-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 6.5A PPAK1212-8

SI7804DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 6.5A PPAK1212-8

SI7806ADN-T1-E3

Vishay

MOSFET N-CH 30V 9A 1212-8

SI7806ADN-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 9A PPAK1212-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!