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SIA417DJ-T1-GE3
the part number is SIA417DJ-T1-GE3
Part
SIA417DJ-T1-GE3
Manufacturer
Description
MOSFET P-CH 8V 12A PPAK SC70-6
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 1V @ 250µA
Vgs(th)(Max)@Id ±5V
Vgs 32 nC @ 5 V
FETFeature 3.5W (Ta), 19W (Tc)
DraintoSourceVoltage(Vdss) 8 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 1.2V, 4.5V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType PowerPAK® SC-70-6
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage PowerPAK® SC-70-6
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 12A (Tc)
Vgs(Max) 1600 pF @ 4 V
MinRdsOn) 23mOhm @ 7A, 4.5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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