shengyuic
shengyuic
sale@shengyuic.com
SPI11N60S5
the part number is SPI11N60S5
Part
SPI11N60S5
Manufacturer
Description
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.01 $0.9898 $0.9595 $0.9292 $0.8888 Get Quotation!
Specification
Min Operating Temperature -55 °C
Drain to Source Breakdown Voltage 600 V
Gate to Source Voltage (Vgs) 20 V
Current Rating 11 A
Fall Time 20 ns
RoHS Compliant
Max Operating Temperature 150 °C
Drain to Source Voltage (Vdss) 600 V
Power Dissipation 125 W
Drain to Source Resistance 380 mΩ
Continuous Drain Current (ID) 11 A
Element Configuration Single
Rise Time 35 ns
Turn-Off Delay Time 150 ns
Halogen Free Not Halogen Free
Number of Pins 3
Input Capacitance 1.46 nF
Voltage Rating (DC) 600 V
Lead Free Lead Free
Rds On Max 380 mΩ
Case/Package TO-262-3
Max Power Dissipation 125 W
Related Parts For SPI11N60S5
SPI100N03S2-03

Infineon

MOSFET N-CH 30V 100A I2PAK

SPI100N03S2L-03

Infineon

MOSFET N-CH 30V 100A TO-262

SPI100N03S2L03

Infineon Technologies

MOSFET N-CH 30V 100A TO262-3

SPI100N08S2-07

Infineon

MOSFET N-CH 75V 100A I2PAK

SPI10N10

Infineon Technologies

MOSFET N-CH 100V 10.3A TO262-3

SPI10N10L

Infineon

MOSFET N-CH 100V 10.3A I2PAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!