shengyuic
shengyuic
sale@shengyuic.com
SPP18P06P
the part number is SPP18P06P
Part
SPP18P06P
Manufacturer
Description
Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.56 $0.5488 $0.532 $0.5152 $0.4928 Get Quotation!
Specification
Min Operating Temperature -55 °C
Dual Supply Voltage -60 V
Mount Through Hole
Fall Time 11 ns
RoHS Compliant
Drain to Source Voltage (Vdss) 60 V
Drain to Source Resistance 100 mΩ
Element Configuration Single
Number of Channels 1
Number of Pins 3
Height 9.45 mm
Input Capacitance 860 pF
Width 4.57 mm
Rds On Max 130 mΩ
Max Power Dissipation 81.1 W
Max Junction Temperature (Tj) 175 °C
Drain to Source Breakdown Voltage -60 V
Nominal Vgs -3 V
Gate to Source Voltage (Vgs) 20 V
REACH SVHC No SVHC
Current Rating -18.6 A
Termination Through Hole
Turn-On Delay Time 12 ns
Max Operating Temperature 175 °C
Power Dissipation 80 W
Continuous Drain Current (ID) -18.6 A
Rise Time 5.8 ns
Length 10.36 mm
Turn-Off Delay Time 24.5 ns
Packaging Tape & Reel (TR)
Voltage Rating (DC) -60 V
Lead Pitch 2.54 mm
Case/Package TO-220-3
Related Parts For SPP18P06P
SPP100N03S2-03

Infineon Technologies

MOSFET N-CH 30V 100A TO220-3

SPP100N03S203

Infineon Technologies

MOSFET N-CH 30V 100A TO220-3

SPP100N03S2L-03

Infineon Technologies

MOSFET N-CH 30V 100A TO220-3

SPP100N03S2L03

Infineon Technologies

MOSFET N-CH 30V 100A TO220-3

SPP100N04S2-04

Infineon Technologies

MOSFET N-CH 40V 100A TO220-3

SPP100N04S2L-03

Infineon Technologies

MOSFET N-CH 40V 100A TO220-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!