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STB11NM60-1
the part number is STB11NM60-1
Part
STB11NM60-1
Manufacturer
Description
MOSFET N-CH 650V 11A I2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Part
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Pricing
Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 30 nC @ 10 V
FETFeature 160W (Tc)
DraintoSourceVoltage(Vdss) 650 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType I2PAK
InputCapacitance(Ciss)(Max)@Vds -
Series MDmesh™
Qualification
SupplierDevicePackage TO-262-3 Long Leads, I2PAK, TO-262AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 11A (Tc)
Vgs(Max) 1000 pF @ 25 V
MinRdsOn) 450mOhm @ 5.5A, 10V
Package Tube
PowerDissipation(Max) -65°C ~ 150°C (TJ)
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