shengyuic
shengyuic
sale@shengyuic.com
STB21NM60N-1
the part number is STB21NM60N-1
Part
STB21NM60N-1
Manufacturer
Description
MOSFET N-CH 600V 17A I2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id 1900 pF @ 50 V
Vgs ±25V
FETFeature 150°C (TJ)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature I2PAK
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-262-3 Long Leads, I2PAK, TO-262AA
InputCapacitance(Ciss)(Max)@Vds 140W (Tc)
Series MDmesh™
Qualification
SupplierDevicePackage 66 nC @ 10 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 17A (Tc)
Vgs(Max) -
MinRdsOn) 220mOhm @ 8.5A, 10V
Package Tube
PowerDissipation(Max) Through Hole
Related Parts For STB21NM60N-1
STB200N04

STMicroelectronics

Compliant Surface Mount 65 ns Tape & Reel 180 ns 3 19 ns No

STB200N4F3

STMicroelectronics

MOSFET N-CH 40V 120A D2PAK

STB200N6F3

STMicroelectronics

MOSFET N-CH 60V 120A D2PAK

STB200NF03-1

STMicroelectronics

Non-Compliant Through Hole 60 ns 195 ns 3 30 ns No 75 ns

STB200NF03T4

STMicroelectronics

MOSFET N-CH 30V 120A D2PAK

STB200NF04-1

STMicroelectronics

MOSFET N-CH 40V 120A I2PAK

STB200NF04L

STMicroelectronics

MOSFET N-CH 40V 120A D2PAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!