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Si4467DY-T1-E3
the part number is Si4467DY-T1-E3
Part
Si4467DY-T1-E3
Manufacturer
Description
Power Field-Effect Transistor, 12A I(D), 12V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
Min Operating Temperature -55 °C
Gate to Source Voltage (Vgs) 8 V
Fall Time 230 ns
Turn-On Delay Time 40 ns
RoHS Compliant
Weight 186.993455 mg
Max Operating Temperature 150 °C
Drain to Source Voltage (Vdss) -12 V
Power Dissipation 2.5 W
Drain to Source Resistance 11 mΩ
Continuous Drain Current (ID) 12 A
Element Configuration Single
Rise Time 60 ns
Number of Channels 1
Length 5 mm
Turn-Off Delay Time 470 ns
Number of Pins 8
Height 1.55 mm
Width 4 mm
Case/Package SO
Max Power Dissipation 2.5 W
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