TPS1101D
Part NoTPS1101D
ManufacturerTexas Instruments
DescriptionMOSFET P-CH 15V 2.3A 8SOIC
Datasheet
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Specification
PackageBulk,Tube
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)15 V
Current-ContinuousDrain(Id)@25°C2.3A (Ta)
DriveVoltage(MaxRdsOn2.7V, 10V
MinRdsOn)90mOhm @ 2.5A, 10V
RdsOn(Max)@Id1.5V @ 250µA
Vgs11.25 nC @ 10 V
Vgs(th)(Max)@Id+2V, -15V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature791mW (Ta)
PowerDissipation(Max)-40°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15989
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 2.2962 | |
10 | 2.2503 | |
100 | 2.1814 | |
1000 | 2.1125 | |
10000 | 2.0207 |