shengyuic
shengyuic
sale@shengyuic.com
1N5059TAP
the part number is 1N5059TAP
Part
1N5059TAP
Description
DIODE AVALANCHE 200V 2A SOD57
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.1632 $0.1599 $0.155 $0.1501 $0.1436 Get Quotation!
Specification
Current-ReverseLeakage@Vr 40pF @ 0V, 1MHz
Speed Standard Recovery >500ns, > 200mA (Io)
F SOD-57, Axial
ProductStatus Active
Package/Case -55°C ~ 175°C
Grade -
Capacitance@Vr Through Hole
ReverseRecoveryTime(trr) 1 µA @ 200 V
MountingType SOD-57
Series -
Qualification
SupplierDevicePackage 4 µs
Voltage-Forward(Vf)(Max)@If 1.15 V @ 2.5 A
Technology Avalanche
Voltage-DCReverse(Vr)(Max) 200 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 2A
Package Tape & Box (TB)
Related Parts For 1N5059TAP
1N50

Advanced Power Elec

-

1N5059

NTE Electronics, Inc

DIODE DO15 200V 2A 150C

1N5059GP-E3/54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO204AC

1N5059GPHE3/54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO204AC

1N5059TAP

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 200V 2A SOD57

1N5059TR

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 200V 2A SOD57

1N5060

Harris Corporation

DIODE GEN PURP 400V 3A SOD57

1N5060

Diotec Semiconductor

DIODE GEN PURP 400V 2A DO15

1N5060

NTE Electronics, Inc

DIODE DO15 400V 2A 150C

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!