shengyuic
shengyuic
sale@shengyuic.com
1N5062
the part number is 1N5062
Part
1N5062
Manufacturer
Description
DIODE GEN PURP 800V 2A DO15
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.0348 $0.0341 $0.0331 $0.032 $0.0306 Get Quotation!
Specification
Current-ReverseLeakage@Vr 5 µA @ 800 V
Speed Standard Recovery >500ns, > 200mA (Io)
F Through Hole
ProductStatus Active
Package/Case DO-15 (DO-204AC)
Grade -
Capacitance@Vr -
ReverseRecoveryTime(trr) 1.5 µs
MountingType DO-204AC, DO-15, Axial
Series -
Qualification
SupplierDevicePackage -50°C ~ 150°C
Voltage-Forward(Vf)(Max)@If 1.1 V @ 2 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 800 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 2A
Package Tape & Reel (TR)
Related Parts For 1N5062
1N50

Advanced Power Elec

-

1N5059

NTE Electronics, Inc

DIODE DO15 200V 2A 150C

1N5059GP-E3/54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO204AC

1N5059GPHE3/54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO204AC

1N5059TAP

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 200V 2A SOD57

1N5059TR

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 200V 2A SOD57

1N5060

Harris Corporation

DIODE GEN PURP 400V 3A SOD57

1N5060

Diotec Semiconductor

DIODE GEN PURP 400V 2A DO15

1N5060

NTE Electronics, Inc

DIODE DO15 400V 2A 150C

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!