shengyuic
shengyuic
sale@shengyuic.com
AIDW30S65C5XKSA1
the part number is AIDW30S65C5XKSA1
Part
AIDW30S65C5XKSA1
Manufacturer
Description
DIODE SIL CARB 650V 30A TO247-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $8.3712 $8.2038 $7.9526 $7.7015 $7.3667 Get Quotation!
Specification
Current-ReverseLeakage@Vr 860pF @ 1V, 1MHz
Speed No Recovery Time > 500mA (Io)
F AEC-Q100/101
ProductStatus Obsolete
Package/Case TO-247-3
Grade 0 ns
Capacitance@Vr Automotive
ReverseRecoveryTime(trr) 120 µA @ 650 V
MountingType Through Hole
Series CoolSiC™
Qualification
SupplierDevicePackage PG-TO247-3-41
Voltage-Forward(Vf)(Max)@If 1.7 V @ 30 A
Technology SiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max) 650 V
OperatingTemperature-Junction -40°C ~ 175°C
Current-AverageRectified(Io) 30A
Package Tube
Related Parts For AIDW30S65C5XKSA1
AIDW10S65C5XKSA1

Infineon Technologies

DIODE SIL CARB 650V 10A TO247-3

AIDW12S65C5XKSA1

Infineon Technologies

DIODE SIL CARB 650V 12A TO247-3

AIDW16S65C5XKSA1

Infineon Technologies

DIODE SIL CARB 650V 16A TO247-3

AIDW20S65C5XKSA1

Infineon Technologies

DIODE SIL CARB 650V 20A TO247-3

AIDW30E60

Infineon Technologies

DIODE GEN PURP 600V 30A TO247-3

AIDW30S65C5XKSA1

Infineon Technologies

DIODE SIL CARB 650V 30A TO247-3

AIDW40S65C5XKSA1

Infineon Technologies

DIODE SIL CARB 650V 40A TO247-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!