sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 2.2V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 34 nC @ 10 V |
| FETFeature | - |
| DraintoSourceVoltage(Vdss) | 30 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | MG-WDSON-2, CanPAK M™ |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | 3-WDSON |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 18A (Ta), 63A (Tc) |
| Vgs(Max) | 2600 pF @ 15 V |
| MinRdsOn) | 4.5mOhm @ 20A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -40°C ~ 150°C (TJ) |
Infineon
Power Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
INFINEON
Power Field-Effect Transistor, 18A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2
INFINEON
Power Field-Effect Transistor, 18A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!