shengyuic
shengyuic
sale@shengyuic.com
BUZ100S
the part number is BUZ100S
Part
BUZ100S
Manufacturer
Description
N-CHANNEL POWER MOSFET
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.605 $0.5929 $0.5748 $0.5566 $0.5324 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 130µA
Vgs(th)(Max)@Id ±20V
Vgs 100 nC @ 10 V
FETFeature 170W (Tc)
DraintoSourceVoltage(Vdss) 55 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO220-3-1
InputCapacitance(Ciss)(Max)@Vds -
Series SIPMOS®
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 77A (Tc)
Vgs(Max) 2375 pF @ 25 V
MinRdsOn) 15mOhm @ 55A, 10V
Package Bulk
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For BUZ100S
BUZ10

STMicroelectronics

MOSFET N-CH 50V 23A TO220AB

BUZ100S

Infineon Technologies

N-CHANNEL POWER MOSFET

BUZ100S-E3045A

Infineon Technologies

N-CHANNEL POWER MOSFET

BUZ101L

Infineon Technologies

N-CHANNEL POWER MOSFET

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!