sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Dual Supply Voltage | 200 V |
| Mount | Through Hole |
| Fall Time | 90 ns |
| RoHS | Compliant |
| Drain to Source Voltage (Vdss) | 200 V |
| Drain to Source Resistance | 130 mΩ |
| Element Configuration | Single |
| Reverse Recovery Time | 180 ns |
| Number of Pins | 3 |
| Height | 9.25 mm |
| Number of Elements | 1 |
| Input Capacitance | 1.9 nF |
| Width | 4.4 mm |
| Lead Free | Contains Lead |
| Rds On Max | 130 mΩ |
| Max Power Dissipation | 125 W |
| Drain to Source Breakdown Voltage | 200 V |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| REACH SVHC | No SVHC |
| Current Rating | 21 A |
| Termination | Through Hole |
| Turn-On Delay Time | 30 ns |
| Resistance | 130 mΩ |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 125 W |
| Continuous Drain Current (ID) | 21 A |
| Rise Time | 70 ns |
| Length | 10 mm |
| Turn-Off Delay Time | 250 ns |
| Voltage Rating (DC) | 200 V |
| Lead Pitch | 2.54 mm |
| Case/Package | TO-220 |
Infineon
Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!