1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $92.9832 | $91.1235 | $88.334 | $85.5445 | $81.8252 | Get Quotation! |
RdsOn(Max)@Id | 3.6V @ 23mA |
---|---|
Vgs(th)(Max)@Id | +15V, -4V |
Vgs | 207 nC @ 15 V |
FETFeature | 556W (Tc) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 15V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-247-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | C3M™ |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 115A (Tc) |
Vgs(Max) | 6085 pF @ 1000 V |
MinRdsOn) | 22.3mOhm @ 75A, 15V |
Package | Tube |
PowerDissipation(Max) | -40°C ~ 175°C (TJ) |
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