FCB070N65S3

Part

FCB070N65S3

Manufacturer

ON Semiconductor

Description

FAIRCHILD SEMICONDUCTOR FCB070N65S3 Power MOSFET, N Channel, 44 A, 650 V, 0.062 ohm, 10 V, 4.5 VNew

Lead Free/ROHS

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	1+	10+	100+	1000+	10000+	Custom
Uni Price	$6.2727	$6.1472	$5.9591	$5.7709	$5.52	Get Quotation!

The above prices does not include taxes and freight rates.

Specification

Drain to Source Voltage (Vdss):	650V
Power Dissipation (Max):	312W (Tc)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Packaging:	Tape & Reel (TR)
Supplier Device Package:	D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:	4.5V @ 4.4mA
Drive Voltage (Max Rds On, Min Rds On):	10V
Lead Free Status / RoHS Status:	Lead free / RoHS Compliant
Detailed Description:	N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263AB)
FET Feature:	-
Moisture Sensitivity Level (MSL):	1 (Unlimited)
Email:	sale@shengyuic.com
FET Type:	N-Channel
Series:	SuperFET® III
Current - Continuous Drain (Id) @ 25°C:	44A (Tc)
Other Names:	FCB070N65S3-ND FCB070N65S3TR
Input Capacitance (Ciss) (Max) @ Vds:	3090pF @ 400V
Vgs (Max):	±30V
Rds On (Max) @ Id, Vgs:	70 mOhm @ 22A, 10V
Technology:	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:	78nC @ 10V
Operating Temperature:	-55°C ~ 150°C (TJ)