shengyuic
shengyuic
sale@shengyuic.com
FCH76N60N
the part number is FCH76N60N
Part
FCH76N60N
Description
POWER FIELD-EFFECT TRANSISTOR, 7
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $17.8534 $17.4963 $16.9607 $16.4251 $15.711 Get Quotation!
Specification
RdsOn(Max)@Id 36mOhm @ 38A, 10V
Vgs(th)(Max)@Id 285 nC @ 10 V
Vgs 4V @ 250µA
FETFeature 543W (Tc)
DraintoSourceVoltage(Vdss) N-Channel
OperatingTemperature -
DriveVoltage(MaxRdsOn 76A (Tc)
ProductStatus Active
Package/Case TO-247
GateCharge(Qg)(Max)@Vgs TO-247-3
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds 12385 pF @ 100 V
Series SupreMOS™
Qualification
SupplierDevicePackage Through Hole
FETType MOSFET (Metal Oxide)
Technology -
Current-ContinuousDrain(Id)@25°C 600 V
Vgs(Max) ±30V
MinRdsOn) 10V
Package Bulk
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For FCH76N60N
FCH76N60N

ON Semiconductor

MOSFET 600V N-Chan MOSFET SupreMOS

FCH76N60N

onsemi

MOSFET N-CH 600V 76A TO247-3

FCH76N60N

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 7

FCH76N60NF

onsemi

MOSFET N-CH 600V 72.8A TO247-3

FCH76N60NF

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 7

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!