sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.7869 | $1.7512 | $1.6976 | $1.6439 | $1.5725 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 75V |
|---|---|
| Power Dissipation (Max): | 3.1W (Ta), 41W (Tc) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | TO-263AB |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount TO-263AB |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 7 Weeks |
| Email: | sale@shengyuic.com |
| FET Type: | N-Channel |
| Series: | PowerTrench® |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta), 14A (Tc) |
| Other Names: | FDB3502CT FDB350CT FDB350CT-ND |
| Input Capacitance (Ciss) (Max) @ Vds: | 815pF @ 40V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 47 mOhm @ 6A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
ON Semiconductor
ON SEMICONDUCTOR - FDB3632 - Power MOSFET, N Channel, 100 V, 80 A, 0.009 ohm, TO-263AB, Surface Mount
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!