shengyuic
shengyuic
sale@shengyuic.com
FDD306P
the part number is FDD306P
Part
FDD306P
Manufacturer
Description
MOSFET SPECIFIED POWER TR 1.8V PCH
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.0272 $1.0067 $0.9758 $0.945 $0.9039 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 12V
Power Dissipation (Max): 52W (Ta)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: P-Channel 12V 6.7A (Ta) 52W (Ta) Surface Mount TO-252
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 9 Weeks
Email: sale@shengyuic.com
FET Type: P-Channel
Series: PowerTrench®
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Other Names: FDD306P-ND FDD306PTR
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 6V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.7A, 4.5V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Operating Temperature: -55°C ~ 175°C (TJ)
Related Parts For FDD306P
FDD300004

Diodes Incorporated

XTAL OSC XO 133.0000MHZ CMOS SMD

FDD306P

ON Semiconductor

MOSFET SPECIFIED POWER TR 1.8V PCH

FDD306P

onsemi

MOSFET P-CH 12V 6.7A TO252

FDD330003

Diodes Inc.

Compliant Surface Mount 3.2004 mm 1.2954 mm 5.0038 mm 133.33 MHz SMD/SMT 45 mA

FDD330003

Diodes Incorporated

XTAL OSC XO 133.3300MHZ CMOS SMD

FDD330005

Diodes Incorporated

XTAL OSC SEAM5032 SMD

FDD3510H

ON Semiconductor

MOSFET 80V Dual N & P-Chan PowerTrench

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!