shengyuic
shengyuic
sale@shengyuic.com
FDD6030L
the part number is FDD6030L
Part
FDD6030L
Description
POWER FIELD-EFFECT TRANSISTOR, 5
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.9256 $0.9071 $0.8793 $0.8516 $0.8145 Get Quotation!
Specification
RdsOn(Max)@Id ±20V
Vgs(th)(Max)@Id 3.2W (Ta), 56W (Tc)
Vgs -
FETFeature TO-252 (DPAK)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature 14.5mOhm @ 12A, 10V
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 28 nC @ 5 V
InputCapacitance(Ciss)(Max)@Vds Surface Mount
Series PowerTrench®
Qualification
SupplierDevicePackage 1230 pF @ 15 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 12A (Ta), 50A (Tc)
Vgs(Max) -55°C ~ 175°C (TJ)
MinRdsOn) 3V @ 250µA
Package Bulk
PowerDissipation(Max) TO-252-3, DPak (2 Leads + Tab), SC-63
Related Parts For FDD6030L
FDD6030BL

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

FDD6030L

ON Semiconductor

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R

FDD6030L

onsemi

MOSFET N-CH 30V 12A/50A DPAK

FDD6030L

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 5

FDD6035AL

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!