shengyuic
shengyuic
sale@shengyuic.com
FDG312P
the part number is FDG312P
Part
FDG312P
Manufacturer
Description
MOSFET P-CH 20V 1.2A SC88
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.1854 $0.1817 $0.1761 $0.1706 $0.1632 Get Quotation!
Specification
RdsOn(Max)@Id 1.5V @ 250µA
Vgs(th)(Max)@Id ±8V
Vgs 5 nC @ 4.5 V
FETFeature 750mW (Ta)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 2.5V, 4.5V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType SC-88 (SC-70-6)
InputCapacitance(Ciss)(Max)@Vds -
Series PowerTrench®
Qualification
SupplierDevicePackage 6-TSSOP, SC-88, SOT-363
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 1.2A (Ta)
Vgs(Max) 330 pF @ 10 V
MinRdsOn) 180mOhm @ 1.2A, 4.5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For FDG312P
FDG311N

ON Semiconductor

Trans MOSFET N-CH 20V 1.9A 6-Pin SC-70 T/R

FDG311N

onsemi

MOSFET N-CH 20V 1.9A SC88

FDG311N

Fairchild Semiconductor

MOSFET N-CH 20V 1.9A SC88

FDG312P

onsemi

MOSFET P-CH 20V 1.2A SC88

FDG312P

Fairchild Semiconductor

MOSFET P-CH 20V 1.2A SC88

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!