shengyuic
shengyuic
sale@shengyuic.com
FQA10N80C
the part number is FQA10N80C
Part
FQA10N80C
Manufacturer
Description
MOSFET N-CH 800V 10A TO-3P
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 800V
Power Dissipation (Max): 240W (Tc)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Packaging: Tube
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 800V 10A (Tc) 240W (Tc) Through Hole TO-3P
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: N-Channel
Series: QFET®
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Related Parts For FQA10N80C
FQA10N60C

Fairchild Semiconductor

MOSFET N-CH 600V 10A TO3P

FQA10N60C

onsemi

MOSFET N-CH 600V 10A TO3P

FQA10N80

onsemi

MOSFET N-CH 800V 9.8A TO3P

FQA10N80

Fairchild Semiconductor

MOSFET N-CH 800V 9.8A TO3P

FQA10N80C

ON Semiconductor

MOSFET N-CH 800V 10A TO-3P

FQA10N80C

onsemi

MOSFET N-CH 800V 10A TO3P

FQA10N80C-F109

onsemi

MOSFET N-CH 800V 10A TO3P

FQA10N80_F109

onsemi

MOSFET N-CH 800V 9.8A TO3P

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!