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FQA55N10
the part number is FQA55N10
Part
FQA55N10
Manufacturer
Description
MOSFET N-CH 100V 61A TO3P
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Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±25V
Vgs 98 nC @ 10 V
FETFeature 190W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-3P
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-3P-3, SC-65-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 61A (Tc)
Vgs(Max) 2730 pF @ 25 V
MinRdsOn) 26mOhm @ 30.5A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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