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FQD10N20CTM
the part number is FQD10N20CTM
Part
FQD10N20CTM
Manufacturer
Description
MOSFET N-CH 200V 7.8A DPAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 26 nC @ 10 V
FETFeature 50W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-252AA
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 7.8A (Tc)
Vgs(Max) 510 pF @ 25 V
MinRdsOn) 360mOhm @ 3.9A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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