sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.8176 | $0.8012 | $0.7767 | $0.7522 | $0.7195 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 600V |
|---|---|
| Power Dissipation (Max): | 2.1W (Tc) |
| Package / Case: | TO-261-4, TO-261AA |
| Mounting Type: | Surface Mount |
| Packaging: | Original-Reel® |
| Supplier Device Package: | SOT-223-4 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 600V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-4 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 14 Weeks |
| Email: | sale@shengyuic.com |
| FET Type: | N-Channel |
| Series: | QFET® |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Tc) |
| Other Names: | FQT1N60CTF-WSDKR FQT1N60CTF_WSDKR FQT1N60CTF_WSDKR-ND |
| Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
| Vgs (Max): | ±30V |
| Rds On (Max) @ Id, Vgs: | 11.5 Ohm @ 100mA, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!