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G2012
the part number is G2012
Part
G2012
Manufacturer
Description
N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.0768 $0.0753 $0.073 $0.0707 $0.0676 Get Quotation!
Specification
RdsOn(Max)@Id 1V @ 250µA
Vgs(th)(Max)@Id ±10V
Vgs 29 nC @ 10 V
FETFeature 1.5W (Tc)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 2.5V, 4.5V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 6-DFN (2x2)
InputCapacitance(Ciss)(Max)@Vds Standard
Series TrenchFET®
Qualification
SupplierDevicePackage 6-WDFN Exposed Pad
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 12A (Tc)
Vgs(Max) 1255 pF @ 10 V
MinRdsOn) 12mOhm @ 5A, 4.5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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