shengyuic
shengyuic
sale@shengyuic.com
IDW20G120C5BFKSA1
the part number is IDW20G120C5BFKSA1
Part
IDW20G120C5BFKSA1
Manufacturer
Description
DIODE ARR SIC 1200V 31A TO247-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $12.648 $12.395 $12.0156 $11.6362 $11.1302 Get Quotation!
Specification
Current-ReverseLeakage@Vr -55°C ~ 175°C
Current-AverageRectified(Io)(perDiode) 31A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ProductStatus Active
Package/Case PG-TO247-3
Grade -
ReverseRecoveryTime(trr) 83 µA @ 1200 V
MountingType TO-247-3
Series CoolSiC™+
Qualification -
SupplierDevicePackage -
Voltage-Forward(Vf)(Max)@If 1.65 V @ 10 A
Technology SiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max) 1200 V
OperatingTemperature-Junction Through Hole
Package Tube
DiodeConfiguration 1 Pair Common Cathode
Related Parts For IDW20G120C5BFKSA1
IDW20C65D2XKSA1

Infineon Technologies

DIODE ARRAY GP 650V 10A TO247-3

IDW20G120C5BFKSA1

Infineon Technologies

DIODE ARR SIC 1200V 31A TO247-3

IDW20G65C5BXKSA1

Infineon Technologies

DIODE ARR SIC 650V 10A TO247-3

IDW20G65C5BXKSA2

Infineon Technologies

DIODE SIL CARB 650V 10A TO247-3

IDW20G65C5FKSA1

Infineon Technologies

DIODE SIL CARB 650V 20A TO247-3

IDW20G65C5XKSA1

Infineon Technologies

DIODE SIL CARB 650V 20A TO247-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!