shengyuic
shengyuic
sale@shengyuic.com
IMZ120R060M1HXKSA1
the part number is IMZ120R060M1HXKSA1
Part
IMZ120R060M1HXKSA1
Manufacturer
Description
SICFET N-CH 1.2KV 36A TO247-4
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $13.4937 $13.2238 $12.819 $12.4142 $11.8745 Get Quotation!
Specification
RdsOn(Max)@Id 5.7V @ 5.6mA
Vgs(th)(Max)@Id +23V, -7V
Vgs 31 nC @ 18 V
FETFeature 150W (Tc)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 15V, 18V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO247-4-1
InputCapacitance(Ciss)(Max)@Vds -
Series CoolSiC™
Qualification
SupplierDevicePackage TO-247-4
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 36A (Tc)
Vgs(Max) 1060 pF @ 800 V
MinRdsOn) 78mOhm @ 13A, 18V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IMZ120R060M1HXKSA1
IMZ120R030M1HXKSA1

Infineon Technologies

SICFET N-CH 1.2KV 56A TO247-4

IMZ120R045M1XKSA1

Infineon Technologies

SICFET N-CH 1200V 52A TO247-4

IMZ120R060M1HXKSA1

Infineon Technologies

SICFET N-CH 1.2KV 36A TO247-4

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!