shengyuic
shengyuic
sale@shengyuic.com
IPB010N06NATMA1
the part number is IPB010N06NATMA1
Part
IPB010N06NATMA1
Manufacturer
Description
MOSFET N-CH 60V 45A/180A TO263-7
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $7.9134 $7.7551 $7.5177 $7.2803 $6.9638 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 280µA
Vgs(th)(Max)@Id ±20V
Vgs 208 nC @ 10 V
FETFeature 300W (Tc)
DraintoSourceVoltage(Vdss) 60 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO263-7
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-263-7, D2PAK (6 Leads + Tab)
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 45A (Ta), 180A (Tc)
Vgs(Max) 15000 pF @ 30 V
MinRdsOn) 1mOhm @ 100A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IPB010N06NATMA1
IPB009N03LGATMA1

Infineon Technologies

MOSFET N-CH 30V 180A TO263-7

IPB010N06NATMA1

Infineon

MOSFET N-CH 60V 45A TO263-7

IPB010N06NATMA1

Infineon Technologies

MOSFET N-CH 60V 45A/180A TO263-7

IPB011N04LGATMA1

Infineon Technologies

MOSFET N-CH 40V 180A TO263-7

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!