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IPB048N06LG
the part number is IPB048N06LG
Part
IPB048N06LG
Manufacturer
Description
Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.2 $1.176 $1.14 $1.104 $1.056 Get Quotation!
Specification
Min Operating Temperature -55 °C
Mount Surface Mount
Fall Time 24 ns
RoHS Compliant
Drain to Source Voltage (Vdss) 60 V
Drain to Source Resistance 4.4 mΩ
Element Configuration Single
Number of Pins 3
Height 4.57 mm
Input Capacitance 7.6 nF
Width 9.45 mm
Lead Free Lead Free
Rds On Max 4.4 mΩ
Max Power Dissipation 300 W
Drain to Source Breakdown Voltage 60 V
Gate to Source Voltage (Vgs) 20 V
Current Rating 100 A
Turn-On Delay Time 18 ns
Max Operating Temperature 175 °C
Power Dissipation 300 W
Continuous Drain Current (ID) 100 A
Rise Time 25 ns
Length 10.31 mm
Turn-Off Delay Time 98 ns
Voltage Rating (DC) 60 V
Case/Package TO-263
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