shengyuic
shengyuic
sale@shengyuic.com
IPD70N03S4L04ATMA1
the part number is IPD70N03S4L04ATMA1
Part
IPD70N03S4L04ATMA1
Manufacturer
Description
MOSFET N-CH 30V 70A TO252-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.4039 $1.3758 $1.3337 $1.2916 $1.2354 Get Quotation!
Specification
RdsOn(Max)@Id 2.2V @ 30µA
Vgs(th)(Max)@Id ±16V
Vgs 48 nC @ 10 V
FETFeature 68W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO252-3-11
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 70A (Tc)
Vgs(Max) 3300 pF @ 25 V
MinRdsOn) 4.3mOhm @ 70A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IPD70N03S4L04ATMA1
IPD70N03S4L04ATMA1

Infineon Technologies

MOSFET N-CH 30V 70A TO252-3

IPD70N04S3-07

Infineon

MOSFET N-CH 40V 82A TO252-3

IPD70N04S3-07

Infineon Technologies

MOSFET N-CH 40V 82A TO252-3

IPD70N10S312ATMA1

Infineon Technologies

MOSFET N-CH 100V 70A TO252-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!