shengyuic
shengyuic
sale@shengyuic.com
IPD80P03P4L07ATMA1
the part number is IPD80P03P4L07ATMA1
Part
IPD80P03P4L07ATMA1
Manufacturer
Description
MOSFET P-CH 30V 80A TO252-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.3398 $1.313 $1.2728 $1.2326 $1.179 Get Quotation!
Specification
RdsOn(Max)@Id 2V @ 130µA
Vgs(th)(Max)@Id +5V, -16V
Vgs 80 nC @ 10 V
FETFeature 88W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Not For New Designs
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO252-3-11
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 80A (Tc)
Vgs(Max) 5700 pF @ 25 V
MinRdsOn) 6.8mOhm @ 80A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IPD80P03P4L07ATMA1
IPD800N06NGBTMA1

Infineon Technologies

MOSFET N-CH 60V 16A TO252-3

IPD80N04S306ATMA1

Infineon Technologies

MOSFET N-CH 40V 90A TO252-3

IPD80N06S3-09

Infineon Technologies

MOSFET N-CH 55V 80A TO252-3

IPD80P03P4L07ATMA1

Infineon Technologies

MOSFET P-CH 30V 80A TO252-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!