shengyuic
shengyuic
sale@shengyuic.com
IRF100B201
the part number is IRF100B201
Part
IRF100B201
Manufacturer
Description
MOSFET N-CH 100V 192A TO-220AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $3.8413 $3.7645 $3.6492 $3.534 $3.3803 Get Quotation!
Specification
Max Junction Temperature (Tj) 175 °C
Min Operating Temperature -55 °C
Drain to Source Breakdown Voltage 100 V
On-State Resistance 4.2 mΩ
Gate to Source Voltage (Vgs) 20 V
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Through Hole
Turn-On Delay Time 17 ns
RoHS Compliant
Max Operating Temperature 175 °C
Drain to Source Voltage (Vdss) 100 V
Power Dissipation 441 W
Drain to Source Resistance 3.5 mΩ
Continuous Drain Current (ID) 192 A
Number of Channels 1
Turn-Off Delay Time 110 ns
Lifecycle Status Production (Last Updated: 2 years ago)
Height 19.15 mm
Package Quantity 1000
Input Capacitance 9.5 nF
Lead Free Lead Free
Rds On Max 4.2 mΩ
Case/Package TO-220
Max Power Dissipation 441 W
Related Parts For IRF100B201
IRF100B201

Infineon

MOSFET N-CH 100V 192A TO-220AB

IRF100B201

Infineon Technologies

MOSFET N-CH 100V 192A TO220AB

IRF100B201PBF

International Rectifier

TO-220

IRF100B202

Infineon

MOSFET N-CH 100V 97A TO-220AB

IRF100B202

Infineon Technologies

MOSFET N-CH 100V 97A TO220AB

IRF100DM116XTMA1

Infineon Technologies

TRENCH >=100V DIRECTFET

IRF100P218AKMA1

Infineon Technologies

MOSFET N-CH 100V 209A TO247AC

IRF100P218XKMA1

Infineon Technologies

MOSFET N-CH 100V 209A TO247AC

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!