sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 100 V |
| Nominal Vgs | -4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| REACH SVHC | No SVHC |
| Schedule B | 8541290080 |
| Mount | Through Hole |
| Current Rating | -750 mA |
| RoHS | Non-Compliant |
| Radiation Hardening | No |
| Max Operating Temperature | 150 °C |
| Drain to Source Voltage (Vdss) | -100 V |
| Power Dissipation | 1 W |
| Continuous Drain Current (ID) | 750 mA |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Number of Pins | 14 |
| Number of Elements | 4 |
| Lead Free | Contains Lead |
| Max Power Dissipation | 1.4 W |
Infineon
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!