shengyuic
shengyuic
sale@shengyuic.com
IV1D12020T2
the part number is IV1D12020T2
Part
IV1D12020T2
Manufacturer
Description
DIODE SIL CARB 1.2KV 54A TO247-2
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $21.12 $20.6976 $20.064 $19.4304 $18.5856 Get Quotation!
Specification
Current-ReverseLeakage@Vr 1114pF @ 1V, 1MHz
Speed 0 ns
F TO-247-2
ProductStatus Active
Package/Case -55°C ~ 175°C
Grade -
Capacitance@Vr Through Hole
ReverseRecoveryTime(trr) 120 µA @ 1200 V
MountingType TO-247-2
Series -
Qualification
SupplierDevicePackage 1.8 V @ 20 A
Voltage-Forward(Vf)(Max)@If No Recovery Time > 500mA (Io)
Technology SiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max) 1200 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 54A
Package Tube
Related Parts For IV1D12020T2
IV1D06006O2

InventChip

DIODE SIL CARB 650V 17.4A TO220

IV1D06006P3

InventChip

DIODE SIC 650V 16.7A TO252-3

IV1D12005O2

InventChip

DIODE SIL CARB 1.2KV 17A TO220-2

IV1D12010O2

InventChip

DIODE SIL CARB 1.2KV 28A TO220-2

IV1D12010T2

InventChip

DIODE SIL CARB 1.2KV 30A TO247-2

IV1D12015T2

InventChip

DIODE SIL CARB 1.2KV 44A TO247-2

IV1D12020T2

InventChip

DIODE SIL CARB 1.2KV 54A TO247-2

IV1D12020T3

InventChip

DIODE ARR SIC 1200V 30A TO247-3

IV1D12030U3

InventChip

DIODE ARR SIC 1200V 44A TO247-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!